Microwave substrate components
I. Overview
Using semiconductor thin film vacuum evaporation, sputtering, electroplating, photolithography, laser trimming, scribing and other processes, pattern metallization on the surface of ceramic substrates (or special substrates), while integrating resistors, capacitors, inductors, etc., to produce Circuit substrates with specific functions have functions such as electrical connection, physical support, and heat dissipation, and are used in hybrid integrated circuit microwave devices.
2. Product features
High frequency, high precision, high reliability
3. technical indicators
Material: Al2O3.
Accuracy: line width/line spacing accuracy ±2.5um.
Metalization: Ti, Ni, Pt, Au, TaN resistors, prefabricated AuSn films, etc.; meet the requirements of gold wire bonding, SnPb/AuSn/AuSi/AuGe welding, and conductive adhesive bonding.
Others: Wrap around on the side, through holes (through hole resistance is less than 50 milliohms).
Film system | Typical bottom resistance | 50 -75-100 Ω/□ |
Typical thickness of transition layer | 1000 ~3000Å | |
Surface metal thickness | 3~8μm | |
Photolithography | Resolution | 0.8μm |
Alignment accuracy | ±1μm | |
Double-sided exposure, thick glue exposure | ||
Dicing | Minimum cutting size | 0.5mm×0.5mm |
Dimensional accuracy | ±50μm | |
Unit alignment accuracy | ±5μm | |
Process capability | 2"× 2 |
[1mマイクロ波基板コンポーネント
I.概要
半導体薄膜真空蒸着、スパッタリング、電気めっき、フォトリソグラフィー、レーザートリミング、スクライビングおよびその他のプロセスを使用して、抵抗器、コンデンサー、インダクターなどを統合しながら、セラミック基板(または特殊基板)の表面に金属化をパターン化して回路基板を製造します特定の機能を備えたものは、電気接続、物理的サポート、放熱などの機能を備えており、ハイブリッド集積回路マイクロ波デバイスで使用されます。